Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SPD07N20GBTMA1
Manufacturer Part Number | SPD07N20GBTMA1 |
---|---|
Future Part Number | FT-SPD07N20GBTMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | SIPMOS® |
SPD07N20GBTMA1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 31.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SPD07N20GBTMA1 Weight | Contact Us |
Replacement Part Number | SPD07N20GBTMA1-FT |
IPD60R600CPBTMA1
Infineon Technologies
IPD60R600E6ATMA1
Infineon Technologies
IPD60R600P6
Infineon Technologies
IPD60R600P6ATMA1
Infineon Technologies
IPD60R650CEBTMA1
Infineon Technologies
IPD60R750E6ATMA1
Infineon Technologies
IPD60R750E6BTMA1
Infineon Technologies
IPD60R950C6
Infineon Technologies
IPD60R950C6ATMA1
Infineon Technologies
IPD640N06LGBTMA1
Infineon Technologies
XC6SLX150-3FG676I
Xilinx Inc.
XC3S1400A-5FG484C
Xilinx Inc.
AGL600V5-FG484I
Microsemi Corporation
LAXP2-8E-5FTN256E
Lattice Semiconductor Corporation
LCMXO2-1200HC-5SG32C
Lattice Semiconductor Corporation
A40MX04-3PL68I
Microsemi Corporation
5SGSED8N2F45I2
Intel
5SGXEBBR2H43I3L
Intel
LFEC10E-3F256C
Lattice Semiconductor Corporation
EPF10K10QC208-3N
Intel