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Infineon Technologies SPB80N10L G

MFG Part Number
SPB80N10L G
Available Quantity
67420 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
SIPMOS® MOSFET N-CH 100V 80A TO-263
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
SPB80N10L G.pdf
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SPB80N10L G Specifications

Manufacturer Part Number SPB80N10L G
Future Part Number FT-SPB80N10L G
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series SIPMOS®
SPB80N10L G Status (Lifecycle) In Stock
Part Status Discontinued at Future Semiconductor
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14 mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4540pF @ 25V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
SPB80N10L G Weight Contact Us
Replacement Part Number SPB80N10L G-FT

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