Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / SNSS35200MR6T1G
Manufacturer Part Number | SNSS35200MR6T1G |
---|---|
Future Part Number | FT-SNSS35200MR6T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SNSS35200MR6T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 35V |
Vce Saturation (Max) @ Ib, Ic | 310mV @ 20mA, 2A |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 1.5V |
Power - Max | 625mW |
Frequency - Transition | 100MHz |
Operating Temperature | - |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 |
Supplier Device Package | 6-TSOP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SNSS35200MR6T1G Weight | Contact Us |
Replacement Part Number | SNSS35200MR6T1G-FT |
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