Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / SMSD1002T1G
Manufacturer Part Number | SMSD1002T1G |
---|---|
Future Part Number | FT-SMSD1002T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SMSD1002T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | - |
Voltage - Collector Emitter Breakdown (Max) | - |
Vce Saturation (Max) @ Ib, Ic | - |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | - |
Power - Max | - |
Frequency - Transition | - |
Operating Temperature | - |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SMSD1002T1G Weight | Contact Us |
Replacement Part Number | SMSD1002T1G-FT |
2N5874
Microsemi Corporation
2N5875
Microsemi Corporation
2N5876
Microsemi Corporation
2N5877
Microsemi Corporation
2N5879
Microsemi Corporation
2N5880
Microsemi Corporation
2N5883
Microsemi Corporation
2N5886
Microsemi Corporation
2N5954
Microsemi Corporation
2N5956
Microsemi Corporation
AT6010A-4AC
Microchip Technology
XCVU095-2FFVD1517I
Xilinx Inc.
M1A3P600-2FGG484
Microsemi Corporation
AGL600V2-FGG256
Microsemi Corporation
AT40K20LV-3EQC
Microchip Technology
AT6005-4AC
Microchip Technology
EP4CGX75CF23C6
Intel
EP2SGX60EF1152C3N
Intel
A42MX24-3TQG176I
Microsemi Corporation
10AX027E1F27E1HG
Intel