Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / SMSD1002T1G
Manufacturer Part Number | SMSD1002T1G |
---|---|
Future Part Number | FT-SMSD1002T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SMSD1002T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | - |
Voltage - Collector Emitter Breakdown (Max) | - |
Vce Saturation (Max) @ Ib, Ic | - |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | - |
Power - Max | - |
Frequency - Transition | - |
Operating Temperature | - |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SMSD1002T1G Weight | Contact Us |
Replacement Part Number | SMSD1002T1G-FT |
2N5874
Microsemi Corporation
2N5875
Microsemi Corporation
2N5876
Microsemi Corporation
2N5877
Microsemi Corporation
2N5879
Microsemi Corporation
2N5880
Microsemi Corporation
2N5883
Microsemi Corporation
2N5886
Microsemi Corporation
2N5954
Microsemi Corporation
2N5956
Microsemi Corporation
A54SX32-TQG144M
Microsemi Corporation
XC6VLX130T-1FFG484I
Xilinx Inc.
M2GL090-1FG484I
Microsemi Corporation
A3P400-1FG256
Microsemi Corporation
M2GL050T-1VFG400I
Microsemi Corporation
10M02SCU169I7G
Intel
5SGXEA5N3F45C2LN
Intel
XC4VLX100-10FFG1148C
Xilinx Inc.
LCMXO2-256HC-4MG132I
Lattice Semiconductor Corporation
EPF10K200SRC240-1N
Intel