Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIZF916DT-T1-GE3
Manufacturer Part Number | SIZF916DT-T1-GE3 |
---|---|
Future Part Number | FT-SIZF916DT-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® Gen IV |
SIZF916DT-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 40A (Tc) |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA, 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 95nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 15V, 4320pF @ 15V |
Power - Max | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Supplier Device Package | 8-PowerPair® (6x5) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIZF916DT-T1-GE3 Weight | Contact Us |
Replacement Part Number | SIZF916DT-T1-GE3-FT |
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