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Vishay Siliconix SISS02DN-T1-GE3

Name: SISS02DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS02DN-T1-GE3
Price: 0.575704 USD
Availability: InStock
Rating: 4.7 (242 reviews)

MFG Part Number: SISS02DN-T1-GE3

Available Quantity: 59200 Pieces

Reference Price: USD 0.575704

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Vishay Siliconix

Brief Description: TrenchFET® Gen IV MOSFET N-CHAN 25V POWERPAK 1212-

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: SISS02DN-T1-GE3.pdf

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SISS02DN-T1-GE3 Specifications

Manufacturer Part Number	SISS02DN-T1-GE3
Future Part Number	FT-SISS02DN-T1-GE3
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	TrenchFET® Gen IV
SISS02DN-T1-GE3 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	51A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.2 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	83nC @ 10V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	4450pF @ 10V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
SISS02DN-T1-GE3 Weight	Contact Us
Replacement Part Number	SISS02DN-T1-GE3-FT

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