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SIS414DN-T1-GE3 Image

Vishay Siliconix SIS414DN-T1-GE3

MFG Part Number
SIS414DN-T1-GE3
Available Quantity
86110 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Vishay Siliconix
Brief Description
TrenchFET® MOSFET N-CH 30V 20A 1212-8 PPAK
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
SIS414DN-T1-GE3.pdf
SIS414DN-T1-GE3 Image

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SIS414DN-T1-GE3 Specifications

Manufacturer Part Number SIS414DN-T1-GE3
Future Part Number FT-SIS414DN-T1-GE3
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series TrenchFET®
SIS414DN-T1-GE3 Status (Lifecycle) In Stock
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 16 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 795pF @ 15V
FET Feature -
Power Dissipation (Max) 3.4W (Ta), 31W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
SIS414DN-T1-GE3 Weight Contact Us
Replacement Part Number SIS414DN-T1-GE3-FT

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