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Vishay Siliconix SIHU2N80E-GE3

MFG Part Number
SIHU2N80E-GE3
Available Quantity
19310 Pieces
Reference Price
USD 1.4
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Vishay Siliconix
Brief Description
E MOSFET N-CH 800V 2.8A IPAK
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
SIHU2N80E-GE3.pdf
SIHU2N80E-GE3 Image

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SIHU2N80E-GE3 Specifications

Manufacturer Part Number SIHU2N80E-GE3
Future Part Number FT-SIHU2N80E-GE3
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series E
SIHU2N80E-GE3 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.75 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 100V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251)
Package / Case TO-251-3 Long Leads, IPak, TO-251AB
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
SIHU2N80E-GE3 Weight Contact Us
Replacement Part Number SIHU2N80E-GE3-FT

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