Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIHP28N65E-GE3
Manufacturer Part Number | SIHP28N65E-GE3 |
---|---|
Future Part Number | FT-SIHP28N65E-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SIHP28N65E-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 112 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3405pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIHP28N65E-GE3 Weight | Contact Us |
Replacement Part Number | SIHP28N65E-GE3-FT |
SI3879DV-T1-E3
Vishay Siliconix
SI3879DV-T1-GE3
Vishay Siliconix
SQ3410EV-T1_GE3
Vishay Siliconix
SQ3418EEV-T1-GE3
Vishay Siliconix
SQ3419AEEV-T1_GE3
Vishay Siliconix
SQ3419EEV-T1-GE3
Vishay Siliconix
SQ3419EV-T1_GE3
Vishay Siliconix
SQ3426EEV-T1-GE3
Vishay Siliconix
SQ3427EEV-T1-GE3
Vishay Siliconix
SQ3427EV-T1_GE3
Vishay Siliconix
LFXP6E-4T144I
Lattice Semiconductor Corporation
XC6SLX16-N3FTG256C
Xilinx Inc.
AGLE3000V5-FG484
Microsemi Corporation
M1A3P250-1PQG208I
Microsemi Corporation
EP3C80F484C7N
Intel
10M50SCE144C8G
Intel
LCMXO2-7000HC-4BG256I
Lattice Semiconductor Corporation
EP1S80F1508C6
Intel
EPF8282ALC84-4
Intel
EPF10K130EQC240-3N
Intel