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Vishay Siliconix SIHB33N60ET5-GE3

MFG Part Number
SIHB33N60ET5-GE3
Available Quantity
66490 Pieces
Reference Price
USD 2.904
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Vishay Siliconix
Brief Description
E MOSFET N-CH 600V 33A TO263
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
SIHB33N60ET5-GE3.pdf
SIHB33N60ET5-GE3 Image

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SIHB33N60ET5-GE3 Specifications

Manufacturer Part Number SIHB33N60ET5-GE3
Future Part Number FT-SIHB33N60ET5-GE3
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series E
SIHB33N60ET5-GE3 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3508pF @ 100V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
SIHB33N60ET5-GE3 Weight Contact Us
Replacement Part Number SIHB33N60ET5-GE3-FT

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