Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIHB21N65EF-GE3
Manufacturer Part Number | SIHB21N65EF-GE3 |
---|---|
Future Part Number | FT-SIHB21N65EF-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SIHB21N65EF-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 106nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2322pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIHB21N65EF-GE3 Weight | Contact Us |
Replacement Part Number | SIHB21N65EF-GE3-FT |
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