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Vishay Siliconix SIHB120N60E-GE3

MFG Part Number
SIHB120N60E-GE3
Available Quantity
18970 Pieces
Reference Price
USD 4.64
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Vishay Siliconix
Brief Description
E MOSFET N-CHAN 650V D2PAK TO-263
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
SIHB120N60E-GE3.pdf
SIHB120N60E-GE3 Image

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SIHB120N60E-GE3 Specifications

Manufacturer Part Number SIHB120N60E-GE3
Future Part Number FT-SIHB120N60E-GE3
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series E
SIHB120N60E-GE3 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1562pF @ 100V
FET Feature -
Power Dissipation (Max) 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
SIHB120N60E-GE3 Weight Contact Us
Replacement Part Number SIHB120N60E-GE3-FT

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