Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / SICRD5650TR
Manufacturer Part Number | SICRD5650TR |
---|---|
Future Part Number | FT-SICRD5650TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SICRD5650TR Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 650V |
Current - Average Rectified (Io) | 5A |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 5A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 60µA @ 650V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |
Operating Temperature - Junction | -55°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SICRD5650TR Weight | Contact Us |
Replacement Part Number | SICRD5650TR-FT |
VS-8EWS10STR-M3
Vishay Semiconductor Diodes Division
VS-8EWS10STRL-M3
Vishay Semiconductor Diodes Division
VS-8EWS10STRR-M3
Vishay Semiconductor Diodes Division
VS-8EWS12SLHM3
Vishay Semiconductor Diodes Division
VS-8EWS12STR-M3
Vishay Semiconductor Diodes Division
VS-8EWS12STRL-M3
Vishay Semiconductor Diodes Division
VS-8EWS12STRR-M3
Vishay Semiconductor Diodes Division
VS-8EWS16S-M3
Vishay Semiconductor Diodes Division
VS-8EWS16SLHM3
Vishay Semiconductor Diodes Division
VS-8EWS16STR-M3
Vishay Semiconductor Diodes Division
A1010B-2VQG80C
Microsemi Corporation
XC7K410T-2FBG676C
Xilinx Inc.
LFE2-20E-6Q208C
Lattice Semiconductor Corporation
AFS600-FG484K
Microsemi Corporation
A3P1000-PQ208
Microsemi Corporation
5SGXEB5R3F43C2L
Intel
5SEE9H40I4N
Intel
XC7VX690T-L2FFG1761E
Xilinx Inc.
5CEFA7F23C8N
Intel
EP20K200EQC208-1
Intel