Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / SICRB101200TR
Manufacturer Part Number | SICRB101200TR |
---|---|
Future Part Number | FT-SICRB101200TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SICRB101200TR Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Current - Average Rectified (Io) | 10A |
Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 100µA @ 1200V |
Capacitance @ Vr, F | 640pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D2PAK |
Operating Temperature - Junction | -55°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SICRB101200TR Weight | Contact Us |
Replacement Part Number | SICRB101200TR-FT |
R9G00218XX
Powerex Inc.
R9G00222XX
Powerex Inc.
R9G00412XX
Powerex Inc.
R9G00418XX
Powerex Inc.
R9G00422XX
Powerex Inc.
R9G00612XX
Powerex Inc.
R9G00618XX
Powerex Inc.
R9G00622XX
Powerex Inc.
R9G00812XX
Powerex Inc.
R9G00818XX
Powerex Inc.
LCMXO2-4000ZE-3TG144C
Lattice Semiconductor Corporation
XC6SLX150-N3FG676I
Xilinx Inc.
APA600-PQG208I
Microsemi Corporation
EP1S10F484C5N
Intel
EP1S10F484C6
Intel
A54SX32A-TQ100M
Microsemi Corporation
LCMXO1200E-3M132I
Lattice Semiconductor Corporation
10AX090U3F45I2LG
Intel
5CGXFC4C6M13C7N
Intel
EP3C55F780C7
Intel