Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIB417EDK-T1-GE3
Manufacturer Part Number | SIB417EDK-T1-GE3 |
---|---|
Future Part Number | FT-SIB417EDK-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SIB417EDK-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 5.8A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
Vgs (Max) | ±5V |
Input Capacitance (Ciss) (Max) @ Vds | 565pF @ 4V |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SC-75-6L Single |
Package / Case | PowerPAK® SC-75-6L |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIB417EDK-T1-GE3 Weight | Contact Us |
Replacement Part Number | SIB417EDK-T1-GE3-FT |
SIA110DJ-T1-GE3
Vishay Siliconix
SIA469DJ-T1-GE3
Vishay Siliconix
SIAA00DJ-T1-GE3
Vishay Siliconix
SIA438EDJ-T1-GE3
Vishay Siliconix
SIA406DJ-T1-GE3
Vishay Siliconix
SIA408DJ-T1-GE3
Vishay Siliconix
SIA411DJ-T1-E3
Vishay Siliconix
SIA411DJ-T1-GE3
Vishay Siliconix
SIA416DJ-T1-GE3
Vishay Siliconix
SIA417DJ-T1-GE3
Vishay Siliconix
LFXP6E-3TN144C
Lattice Semiconductor Corporation
EX64-TQG100I
Microsemi Corporation
XCV1000E-8FG900C
Xilinx Inc.
A3P400-1FGG484I
Microsemi Corporation
A3P600-1FG256I
Microsemi Corporation
EP3SE50F484I3
Intel
EP2AGX125DF25C5N
Intel
5SGXMA7N2F45I2N
Intel
5SGXMA5H2F35C2LN
Intel
EP3SL150F780C4
Intel