Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIA537EDJ-T1-GE3
Manufacturer Part Number | SIA537EDJ-T1-GE3 |
---|---|
Future Part Number | FT-SIA537EDJ-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SIA537EDJ-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 12V, 20V |
Current - Continuous Drain (Id) @ 25°C | 4.5A |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 5.2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 6V |
Power - Max | 7.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SC-70-6 Dual |
Supplier Device Package | PowerPAK® SC-70-6 Dual |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIA537EDJ-T1-GE3 Weight | Contact Us |
Replacement Part Number | SIA537EDJ-T1-GE3-FT |
SP8K2FU6TB
Rohm Semiconductor
SP8K31TB1
Rohm Semiconductor
SP8K3FU6TB
Rohm Semiconductor
SP8K4FU6TB
Rohm Semiconductor
SP8K4TB
Rohm Semiconductor
SP8K5FU6TB
Rohm Semiconductor
SP8K5TB
Rohm Semiconductor
SP8M10FU6TB
Rohm Semiconductor
SP8M10TB
Rohm Semiconductor
SP8M2FU6TB
Rohm Semiconductor
LCMXO2-640HC-4TG100I
Lattice Semiconductor Corporation
AGLN030V2-ZUCG81I
Microsemi Corporation
M1A3P1000L-1FGG484I
Microsemi Corporation
EP20K300EFC672-1N
Intel
EPF10K200SFC672-2
Intel
EP3C5F256C7N
Intel
5SGXMA5N3F40C2N
Intel
LCMXO2-4000ZE-3FTG256C
Lattice Semiconductor Corporation
EP4CGX22CF19C7N
Intel
EP20K200EQC208-2
Intel