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Vishay Siliconix SIA429DJT-T1-GE3

MFG Part Number
SIA429DJT-T1-GE3
Available Quantity
43010 Pieces
Reference Price
USD 0.194944
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Vishay Siliconix
Brief Description
TrenchFET® MOSFET P-CH 20V 12A SC-70
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
SIA429DJT-T1-GE3.pdf
SIA429DJT-T1-GE3 Image

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SIA429DJT-T1-GE3 Specifications

Manufacturer Part Number SIA429DJT-T1-GE3
Future Part Number FT-SIA429DJT-T1-GE3
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series TrenchFET®
SIA429DJT-T1-GE3 Status (Lifecycle) In Stock
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 20.5 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 10V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
SIA429DJT-T1-GE3 Weight Contact Us
Replacement Part Number SIA429DJT-T1-GE3-FT

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