Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIA106DJ-T1-GE3
Manufacturer Part Number | SIA106DJ-T1-GE3 |
---|---|
Future Part Number | FT-SIA106DJ-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® Gen IV |
SIA106DJ-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Rds On (Max) @ Id, Vgs | 18.5 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SC-70-6 Single |
Package / Case | PowerPAK® SC-70-6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIA106DJ-T1-GE3 Weight | Contact Us |
Replacement Part Number | SIA106DJ-T1-GE3-FT |
SI4886DY-T1-E3
Vishay Siliconix
SI4886DY-T1-GE3
Vishay Siliconix
SI4888DY-T1-E3
Vishay Siliconix
SI4888DY-T1-GE3
Vishay Siliconix
SI4890BDY-T1-E3
Vishay Siliconix
SI4892DY-T1-E3
Vishay Siliconix
SI4892DY-T1-GE3
Vishay Siliconix
SI4896DY-T1-E3
Vishay Siliconix
SI4896DY-T1-GE3
Vishay Siliconix
SI9410BDY-T1-E3
Vishay Siliconix
EX128-TQ100
Microsemi Corporation
XC3S50A-4VQG100I
Xilinx Inc.
A54SX32A-1CQ256
Microsemi Corporation
A3P1000-PQ208
Microsemi Corporation
A42MX16-VQG100M
Microsemi Corporation
EP1SGX10CF672C7N
Intel
10AX016C3U19I2LG
Intel
10CL025ZE144I8G
Intel
5SGXEA7H3F35I4
Intel
EP3SE50F780I3
Intel