Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI8497DB-T2-E1
Manufacturer Part Number | SI8497DB-T2-E1 |
---|---|
Future Part Number | FT-SI8497DB-T2-E1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI8497DB-T2-E1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2V, 4.5V |
Rds On (Max) @ Id, Vgs | 53 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 1320pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 2.77W (Ta), 13W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-microfoot |
Package / Case | 6-UFBGA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI8497DB-T2-E1 Weight | Contact Us |
Replacement Part Number | SI8497DB-T2-E1-FT |
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