Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI8467DB-T2-E1
Manufacturer Part Number | SI8467DB-T2-E1 |
---|---|
Future Part Number | FT-SI8467DB-T2-E1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI8467DB-T2-E1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 73 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-XFBGA, CSPBGA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI8467DB-T2-E1 Weight | Contact Us |
Replacement Part Number | SI8467DB-T2-E1-FT |
SQJ850EP-T1_GE3
Vishay Siliconix
SIHJ7N65E-T1-GE3
Vishay Siliconix
SIJ438DP-T1-GE3
Vishay Siliconix
SIJ494DP-T1-GE3
Vishay Siliconix
SQJ407EP-T1_GE3
Vishay Siliconix
SQJ423EP-T1_GE3
Vishay Siliconix
SQJ454EP-T1_GE3
Vishay Siliconix
SQJ463EP-T1_GE3
Vishay Siliconix
SQJ848EP-T1_GE3
Vishay Siliconix
SQJA80EP-T1_GE3
Vishay Siliconix
XC7A15T-2FTG256C
Xilinx Inc.
XCKU035-L1FFVA1156I
Xilinx Inc.
A3PN030-Z1QNG48
Microsemi Corporation
M2GL025T-VFG400
Microsemi Corporation
EP3C5E144C7
Intel
XC7A200T-1FF1156I
Xilinx Inc.
A3P1000-1FGG144I
Microsemi Corporation
AGL600V2-FG144I
Microsemi Corporation
EP2AGX125EF29C6N
Intel
EP20K100EBI356-2X
Intel