Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI7962DP-T1-E3
Manufacturer Part Number | SI7962DP-T1-E3 |
---|---|
Future Part Number | FT-SI7962DP-T1-E3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI7962DP-T1-E3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 7.1A |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 11.1A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI7962DP-T1-E3 Weight | Contact Us |
Replacement Part Number | SI7962DP-T1-E3-FT |
TPC8207(TE12L,Q)
Toshiba Semiconductor and Storage
TPC8208(TE12L,Q)
Toshiba Semiconductor and Storage
TPC8208(TE12L,Q,M)
Toshiba Semiconductor and Storage
TPC8211(TE12L,Q,M)
Toshiba Semiconductor and Storage
TPC8212-H(TE12LQ,M
Toshiba Semiconductor and Storage
TPC8213-H(TE12LQ,M
Toshiba Semiconductor and Storage
TPC8405(TE12L,Q,M)
Toshiba Semiconductor and Storage
UPA1764G-E2-AZ
Renesas Electronics America
MCQ4503-TP
Micro Commercial Co
MCQ4559-TP
Micro Commercial Co
XCKU035-2FBVA900I
Xilinx Inc.
XC3S400-4FG456C
Xilinx Inc.
M1AGL1000V2-FG484
Microsemi Corporation
EP4CE6E22C6N
Intel
5SGSMD6N3F45C2N
Intel
XC7VX550T-L2FFG1158E
Xilinx Inc.
XC6SLX9-L1CSG225I
Xilinx Inc.
A40MX02-1PQG100M
Microsemi Corporation
LFE2-6E-6F256I
Lattice Semiconductor Corporation
5AGXMB7G4F35C5N
Intel