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Vishay Siliconix SI7792DP-T1-GE3

Name: SI7792DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7792DP-T1-GE3
Availability: InStock
Rating: 4.6 (251 reviews)

MFG Part Number: SI7792DP-T1-GE3

Available Quantity: 74160 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Vishay Siliconix

Brief Description: SkyFET®, TrenchFET® Gen III MOSFET N-CH 30V P-PACK SO-8

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: SI7792DP-T1-GE3.pdf

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SI7792DP-T1-GE3 Specifications

Manufacturer Part Number	SI7792DP-T1-GE3
Future Part Number	FT-SI7792DP-T1-GE3
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	SkyFET®, TrenchFET® Gen III
SI7792DP-T1-GE3 Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	40.6A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	135nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4.735nF @ 15V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
SI7792DP-T1-GE3 Weight	Contact Us
Replacement Part Number	SI7792DP-T1-GE3-FT

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