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Vishay Siliconix SI7703EDN-T1-GE3

MFG Part Number
SI7703EDN-T1-GE3
Available Quantity
75520 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Vishay Siliconix
Brief Description
TrenchFET® MOSFET P-CH 20V 4.3A 1212-8 PPAK
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
SI7703EDN-T1-GE3.pdf
SI7703EDN-T1-GE3 Image

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SI7703EDN-T1-GE3 Specifications

Manufacturer Part Number SI7703EDN-T1-GE3
Future Part Number FT-SI7703EDN-T1-GE3
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series TrenchFET®
SI7703EDN-T1-GE3 Status (Lifecycle) In Stock
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 48 mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
SI7703EDN-T1-GE3 Weight Contact Us
Replacement Part Number SI7703EDN-T1-GE3-FT

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