Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI6562CDQ-T1-GE3
Manufacturer Part Number | SI6562CDQ-T1-GE3 |
---|---|
Future Part Number | FT-SI6562CDQ-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI6562CDQ-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.7A, 6.1A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 5.7A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 10V |
Power - Max | 1.6W, 1.7W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI6562CDQ-T1-GE3 Weight | Contact Us |
Replacement Part Number | SI6562CDQ-T1-GE3-FT |
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