Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI6469DQ-T1-GE3
Manufacturer Part Number | SI6469DQ-T1-GE3 |
---|---|
Future Part Number | FT-SI6469DQ-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI6469DQ-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSSOP |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI6469DQ-T1-GE3 Weight | Contact Us |
Replacement Part Number | SI6469DQ-T1-GE3-FT |
SPB10N10
Infineon Technologies
SPB10N10 G
Infineon Technologies
SPB10N10L
Infineon Technologies
SPB10N10L G
Infineon Technologies
SPB11N60C3ATMA1
Infineon Technologies
SPB11N60S5ATMA1
Infineon Technologies
SPB12N50C3ATMA1
Infineon Technologies
SPB16N50C3ATMA1
Infineon Technologies
SPB17N80C3ATMA1
Infineon Technologies
SPB18P06P
Infineon Technologies
XC3S200A-4FT256I
Xilinx Inc.
XC3S2000-4FG456C
Xilinx Inc.
A42MX09-VQ100I
Microsemi Corporation
AGL030V5-VQ100I
Microsemi Corporation
EP2C50F672I8
Intel
XC6SLX4-2CSG225I
Xilinx Inc.
AGL600V2-CSG281
Microsemi Corporation
LFXP6C-3Q208C
Lattice Semiconductor Corporation
LFXP2-40E-6F484I
Lattice Semiconductor Corporation
EP3SL50F780C4
Intel