Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI6463BDQ-T1-E3
Manufacturer Part Number | SI6463BDQ-T1-E3 |
---|---|
Future Part Number | FT-SI6463BDQ-T1-E3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI6463BDQ-T1-E3 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 7.4A, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 1.05W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSSOP |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI6463BDQ-T1-E3 Weight | Contact Us |
Replacement Part Number | SI6463BDQ-T1-E3-FT |
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