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SI5475DDC-T1-GE3 Image

Vishay Siliconix SI5475DDC-T1-GE3

MFG Part Number
SI5475DDC-T1-GE3
Available Quantity
52890 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Vishay Siliconix
Brief Description
TrenchFET® MOSFET P-CH 12V 6A 1206-8
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
SI5475DDC-T1-GE3.pdf
SI5475DDC-T1-GE3 Image

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SI5475DDC-T1-GE3 Specifications

Manufacturer Part Number SI5475DDC-T1-GE3
Future Part Number FT-SI5475DDC-T1-GE3
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series TrenchFET®
SI5475DDC-T1-GE3 Status (Lifecycle) In Stock
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 32 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 6V
FET Feature -
Power Dissipation (Max) 2.3W (Ta), 5.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
SI5475DDC-T1-GE3 Weight Contact Us
Replacement Part Number SI5475DDC-T1-GE3-FT

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Shipping Methods

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Our Email: [email protected]

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