Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI4966DY-T1-GE3
Manufacturer Part Number | SI4966DY-T1-GE3 |
---|---|
Future Part Number | FT-SI4966DY-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI4966DY-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 7.1A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI4966DY-T1-GE3 Weight | Contact Us |
Replacement Part Number | SI4966DY-T1-GE3-FT |
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