Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI3529DV-T1-E3
Manufacturer Part Number | SI3529DV-T1-E3 |
---|---|
Future Part Number | FT-SI3529DV-T1-E3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI3529DV-T1-E3 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 2.5A, 1.95A |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 205pF @ 20V |
Power - Max | 1.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI3529DV-T1-E3 Weight | Contact Us |
Replacement Part Number | SI3529DV-T1-E3-FT |
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