Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI3460BDV-T1-E3
Manufacturer Part Number | SI3460BDV-T1-E3 |
---|---|
Future Part Number | FT-SI3460BDV-T1-E3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI3460BDV-T1-E3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.1A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 8V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta), 3.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI3460BDV-T1-E3 Weight | Contact Us |
Replacement Part Number | SI3460BDV-T1-E3-FT |
SI1072X-T1-GE3
Vishay Siliconix
SI1073X-T1-E3
Vishay Siliconix
SI1073X-T1-GE3
Vishay Siliconix
SI1078X-T1-GE3
Vishay Siliconix
SI1013X-T1-E3
Vishay Siliconix
SI1032X-T1-E3
Vishay Siliconix
SI1046X-T1-GE3
Vishay Siliconix
SI1012R-T1-GE3
Vishay Siliconix
SI1013R-T1-GE3
Vishay Siliconix
SI1032R-T1-GE3
Vishay Siliconix
AT6010ALV-4AC
Microchip Technology
EX64-TQ100I
Microsemi Corporation
XC4005XL-3VQ100I
Xilinx Inc.
M1A3P600L-1FGG484I
Microsemi Corporation
LFE5UM-85F-7BG756I
Lattice Semiconductor Corporation
EP20K200EFC484-2XN
Intel
5SGXEA5K3F40I3LN
Intel
EP4CE6E22C8N
Intel
LFEC6E-5F484C
Lattice Semiconductor Corporation
5SGXEA3H2F35I3LN
Intel