Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI3447BDV-T1-GE3
Manufacturer Part Number | SI3447BDV-T1-GE3 |
---|---|
Future Part Number | FT-SI3447BDV-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI3447BDV-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI3447BDV-T1-GE3 Weight | Contact Us |
Replacement Part Number | SI3447BDV-T1-GE3-FT |
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