Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI2337DS-T1-GE3
Manufacturer Part Number | SI2337DS-T1-GE3 |
---|---|
Future Part Number | FT-SI2337DS-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI2337DS-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 270 mOhm @ 1.2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 40V |
FET Feature | - |
Power Dissipation (Max) | 760mW (Ta), 2.5W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI2337DS-T1-GE3 Weight | Contact Us |
Replacement Part Number | SI2337DS-T1-GE3-FT |
SI2312CDS-T1-GE3
Vishay Siliconix
SI2333CDS-T1-E3
Vishay Siliconix
SQ2310ES-T1_GE3
Vishay Siliconix
BSS123NH6327XTSA1
Infineon Technologies
FDV305N
ON Semiconductor
RTR040N03TL
Rohm Semiconductor
BSS84PH6327XTSA2
Infineon Technologies
SQ2362ES-T1_GE3
Vishay Siliconix
T2N7002BK,LM
Toshiba Semiconductor and Storage
FDN5618P
ON Semiconductor
A1020B-VQG80I
Microsemi Corporation
XC6VLX75T-L1FFG484I
Xilinx Inc.
APA1000-BG456M
Microsemi Corporation
AGLN125V2-VQ100I
Microsemi Corporation
EP4CE75F23C8L
Intel
XC5VLX50-3FF676C
Xilinx Inc.
AGL060V2-CS121
Microsemi Corporation
EP20K400ERC240-1
Intel
EPF10K10QI208-4
Intel
EPF10K30AQC208-3N
Intel