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Vishay Siliconix SI2319CDS-T1-GE3

MFG Part Number
SI2319CDS-T1-GE3
Available Quantity
50870 Pieces
Reference Price
USD 0.180504
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Vishay Siliconix
Brief Description
TrenchFET® MOSFET P-CH 40V 4.4A SOT-23
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
SI2319CDS-T1-GE3.pdf
SI2319CDS-T1-GE3 Image

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SI2319CDS-T1-GE3 Specifications

Manufacturer Part Number SI2319CDS-T1-GE3
Future Part Number FT-SI2319CDS-T1-GE3
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series TrenchFET®
SI2319CDS-T1-GE3 Status (Lifecycle) In Stock
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 77 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 595pF @ 20V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
SI2319CDS-T1-GE3 Weight Contact Us
Replacement Part Number SI2319CDS-T1-GE3-FT

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