Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI1413DH-T1-GE3
Manufacturer Part Number | SI1413DH-T1-GE3 |
---|---|
Future Part Number | FT-SI1413DH-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI1413DH-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 115 mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-70-6 (SOT-363) |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI1413DH-T1-GE3 Weight | Contact Us |
Replacement Part Number | SI1413DH-T1-GE3-FT |
PSMN4R4-80PS,127
Nexperia USA Inc.
PSMN4R3-30PL,127
Nexperia USA Inc.
DMT4005SCT
Diodes Incorporated
TK12E80W,S1X
Toshiba Semiconductor and Storage
TK17E80W,S1X
Toshiba Semiconductor and Storage
TK7E80W,S1X
Toshiba Semiconductor and Storage
DMNH10H028SCT
Diodes Incorporated
DMNH6008SCTQ
Diodes Incorporated
DMG4N60SCT
Diodes Incorporated
DMG9N65CT
Diodes Incorporated