Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI1403BDL-T1-GE3
Manufacturer Part Number | SI1403BDL-T1-GE3 |
---|---|
Future Part Number | FT-SI1403BDL-T1-GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI1403BDL-T1-GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 4.5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 625mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-70-6 |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI1403BDL-T1-GE3 Weight | Contact Us |
Replacement Part Number | SI1403BDL-T1-GE3-FT |
SPA16N50C3XKSA1
Infineon Technologies
SPA17N80C3XKSA1
Infineon Technologies
SPA20N60CFDXKSA1
Infineon Technologies
SPA20N65C3XKSA1
Infineon Technologies
SPA21N50C3XKSA1
Infineon Technologies
TK12A80W,S4X
Toshiba Semiconductor and Storage
TK16A60W5,S4VX
Toshiba Semiconductor and Storage
TK31A60W,S4VX
Toshiba Semiconductor and Storage
TK35A65W,S5X
Toshiba Semiconductor and Storage
TK42A12N1,S4X
Toshiba Semiconductor and Storage
XCV200-5FG256I
Xilinx Inc.
APA150-FGG256
Microsemi Corporation
M7A3P1000-FGG256I
Microsemi Corporation
A40MX04-1PL68
Microsemi Corporation
EP1M350F780C6
Intel
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484I
Lattice Semiconductor Corporation
10AX066H1F34I1SG
Intel
EP1C6Q240C7N
Intel
EP1K100QC208-1GZ
Intel