Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / SG2013J-883B
Manufacturer Part Number | SG2013J-883B |
---|---|
Future Part Number | FT-SG2013J-883B |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SG2013J-883B Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 7 NPN Darlington |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.9V @ 600µA, 500mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 900 @ 500mA, 2V |
Power - Max | - |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | - |
Supplier Device Package | 16-CDIP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SG2013J-883B Weight | Contact Us |
Replacement Part Number | SG2013J-883B-FT |
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