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STMicroelectronics SCTW90N65G2V

MFG Part Number
SCTW90N65G2V
Available Quantity
15830 Pieces
Reference Price
USD 48.12
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
STMicroelectronics
Brief Description
- SILICON CARBIDE POWER MOSFET 650
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
SCTW90N65G2V.pdf
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SCTW90N65G2V Specifications

Manufacturer Part Number SCTW90N65G2V
Future Part Number FT-SCTW90N65G2V
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
SCTW90N65G2V Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 25 mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 157nC @ 18V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 400V
FET Feature -
Power Dissipation (Max) 390W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
SCTW90N65G2V Weight Contact Us
Replacement Part Number SCTW90N65G2V-FT

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