Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SCTW90N65G2V
Manufacturer Part Number | SCTW90N65G2V |
---|---|
Future Part Number | FT-SCTW90N65G2V |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SCTW90N65G2V Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 157nC @ 18V |
Vgs (Max) | +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 390W (Tc) |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | HiP247™ |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SCTW90N65G2V Weight | Contact Us |
Replacement Part Number | SCTW90N65G2V-FT |
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