Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SCTH90N65G2V-7
Manufacturer Part Number | SCTH90N65G2V-7 |
---|---|
Future Part Number | FT-SCTH90N65G2V-7 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SCTH90N65G2V-7 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 157nC @ 18V |
Vgs (Max) | +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 330W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | H2PAK-7 |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SCTH90N65G2V-7 Weight | Contact Us |
Replacement Part Number | SCTH90N65G2V-7-FT |
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