Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SCT2H12NZGC11
Manufacturer Part Number | SCT2H12NZGC11 |
---|---|
Future Part Number | FT-SCT2H12NZGC11 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SCT2H12NZGC11 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700V |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.1A, 18V |
Vgs(th) (Max) @ Id | 4V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 18V |
Vgs (Max) | +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 800V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PFM |
Package / Case | TO-3PFM, SC-93-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SCT2H12NZGC11 Weight | Contact Us |
Replacement Part Number | SCT2H12NZGC11-FT |
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