Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SCT10N120
Manufacturer Part Number | SCT10N120 |
---|---|
Future Part Number | FT-SCT10N120 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SCT10N120 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 690 mOhm @ 6A, 20V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 20V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | HiP247™ |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SCT10N120 Weight | Contact Us |
Replacement Part Number | SCT10N120-FT |
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