Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / SB120E-G
Manufacturer Part Number | SB120E-G |
---|---|
Future Part Number | FT-SB120E-G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SB120E-G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 20V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 500mV @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 500µA @ 20V |
Capacitance @ Vr, F | 110pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-204AL, DO-41, Axial |
Supplier Device Package | DO-41 |
Operating Temperature - Junction | -65°C ~ 125°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SB120E-G Weight | Contact Us |
Replacement Part Number | SB120E-G-FT |
CSFC302-G
Comchip Technology
CSFC303-G
Comchip Technology
CSFC304-G
Comchip Technology
CSFC305-G
Comchip Technology
CURC301-G
Comchip Technology
CURC302-G
Comchip Technology
CURC303-G
Comchip Technology
CURC304-G
Comchip Technology
CURC305-G
Comchip Technology
CURC306-G
Comchip Technology
XC6SLX150T-2CSG484I
Xilinx Inc.
AGLN125V5-ZCSG81I
Microsemi Corporation
AGL400V5-FGG484
Microsemi Corporation
EP3C55F484C8N
Intel
10CL055YU484C8G
Intel
EP4SGX230KF40C3N
Intel
5SGSMD4E3H29I3LN
Intel
LCMXO640C-5B256C
Lattice Semiconductor Corporation
10AX090N3F45E2LG
Intel
10AX032E2F29E1HG
Intel