Manufacturer Part Number | S85DR |
---|---|
Future Part Number | FT-S85DR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
S85DR Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) | 85A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 85A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 10µA @ 100V |
Capacitance @ Vr, F | - |
Mounting Type | Chassis, Stud Mount |
Package / Case | DO-203AB, DO-5, Stud |
Supplier Device Package | DO-5 |
Operating Temperature - Junction | -65°C ~ 180°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
S85DR Weight | Contact Us |
Replacement Part Number | S85DR-FT |
S16D
GeneSiC Semiconductor
S16DR
GeneSiC Semiconductor
S16G
GeneSiC Semiconductor
S16GR
GeneSiC Semiconductor
S16JR
GeneSiC Semiconductor
S16K
GeneSiC Semiconductor
S16KR
GeneSiC Semiconductor
S16M
GeneSiC Semiconductor
S16MR
GeneSiC Semiconductor
S16QR
GeneSiC Semiconductor
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel