Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / S2M-E3/5BT
Manufacturer Part Number | S2M-E3/5BT |
---|---|
Future Part Number | FT-S2M-E3/5BT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
S2M-E3/5BT Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1000V |
Current - Average Rectified (Io) | 1.5A |
Voltage - Forward (Vf) (Max) @ If | 1.15V @ 1.5A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 2µs |
Current - Reverse Leakage @ Vr | 1µA @ 1000V |
Capacitance @ Vr, F | 16pF @ 4V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | DO-214AA, SMB |
Supplier Device Package | DO-214AA (SMB) |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
S2M-E3/5BT Weight | Contact Us |
Replacement Part Number | S2M-E3/5BT-FT |
SS16HE3_A/I
Vishay Semiconductor Diodes Division
SS19-E3/5AT
Vishay Semiconductor Diodes Division
SS19-E3/61T
Vishay Semiconductor Diodes Division
SS19-M3/5AT
Vishay Semiconductor Diodes Division
SS19-M3/61T
Vishay Semiconductor Diodes Division
SS1H10HE3/5AT
Vishay Semiconductor Diodes Division
SS1H10HE3/61T
Vishay Semiconductor Diodes Division
SS1H10HE3_A/H
Vishay Semiconductor Diodes Division
SS1H10HE3_A/I
Vishay Semiconductor Diodes Division
SS1H9HE3/5AT
Vishay Semiconductor Diodes Division
A3PN020-QNG68
Microsemi Corporation
XC3S1400A-4FT256I
Xilinx Inc.
XC6SLX16-3FT256C
Xilinx Inc.
XC7A200T-1FBG676I
Xilinx Inc.
A54SX08A-PQ208I
Microsemi Corporation
LFE5U-12F-7BG381C
Lattice Semiconductor Corporation
A3PN060-Z1VQG100I
Microsemi Corporation
XC5VLX220T-1FFG1738C
Xilinx Inc.
LCMXO640E-3M100C
Lattice Semiconductor Corporation
5CEFA4M13C8N
Intel