Manufacturer Part Number | S12JR |
---|---|
Future Part Number | FT-S12JR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
S12JR Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 12A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 12A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 10µA @ 50V |
Capacitance @ Vr, F | - |
Mounting Type | Chassis, Stud Mount |
Package / Case | DO-203AA, DO-4, Stud |
Supplier Device Package | DO-4 |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
S12JR Weight | Contact Us |
Replacement Part Number | S12JR-FT |
MBR3560
GeneSiC Semiconductor
MBR3580
GeneSiC Semiconductor
MBR3580R
GeneSiC Semiconductor
MBR60100
GeneSiC Semiconductor
MBR60100R
GeneSiC Semiconductor
MBR6020
GeneSiC Semiconductor
MBR6020R
GeneSiC Semiconductor
MBR6030
GeneSiC Semiconductor
MBR6030R
GeneSiC Semiconductor
MBR6035
GeneSiC Semiconductor
XC3042A-7PQ100C
Xilinx Inc.
M2GL050-FCSG325
Microsemi Corporation
M2GL010TS-1VFG256T2
Microsemi Corporation
5SGXEA5K2F40C2N
Intel
10AX027H3F34E2SG
Intel
XCS10-4PC84C
Xilinx Inc.
LFE2M50E-7FN900C
Lattice Semiconductor Corporation
LFE2M35E-6F484I
Lattice Semiconductor Corporation
5AGXMA7G4F31C4N
Intel
EP2AGX95EF35C6ES
Intel