Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RS1E350BNTB
Manufacturer Part Number | RS1E350BNTB |
---|---|
Future Part Number | FT-RS1E350BNTB |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RS1E350BNTB Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 185nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7900pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-HSOP |
Package / Case | 8-PowerTDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RS1E350BNTB Weight | Contact Us |
Replacement Part Number | RS1E350BNTB-FT |
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