Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RQK0607AQDQS#H1
Manufacturer Part Number | RQK0607AQDQS#H1 |
---|---|
Future Part Number | FT-RQK0607AQDQS#H1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RQK0607AQDQS#H1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 270 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | UPAK |
Package / Case | TO-243AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RQK0607AQDQS#H1 Weight | Contact Us |
Replacement Part Number | RQK0607AQDQS#H1-FT |
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