Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RQJ0303PGDQA#H6
Manufacturer Part Number | RQJ0303PGDQA#H6 |
---|---|
Future Part Number | FT-RQJ0303PGDQA#H6 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RQJ0303PGDQA#H6 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 68 mOhm @ 1.6A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | +10V, -20V |
Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 800mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 3-MPAK |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RQJ0303PGDQA#H6 Weight | Contact Us |
Replacement Part Number | RQJ0303PGDQA#H6-FT |
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