Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RQ6E055BNTCR
Manufacturer Part Number | RQ6E055BNTCR |
---|---|
Future Part Number | FT-RQ6E055BNTCR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RQ6E055BNTCR Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 355pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSMT6 (SC-95) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RQ6E055BNTCR Weight | Contact Us |
Replacement Part Number | RQ6E055BNTCR-FT |
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