Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN2966FE(TE85L,F)
Manufacturer Part Number | RN2966FE(TE85L,F) |
---|---|
Future Part Number | FT-RN2966FE(TE85L,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2966FE(TE85L,F) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2966FE(TE85L,F) Weight | Contact Us |
Replacement Part Number | RN2966FE(TE85L,F)-FT |
IMD6AT108
Rohm Semiconductor
IMD9AT108
Rohm Semiconductor
IMH21T110
Rohm Semiconductor
IMH23T110
Rohm Semiconductor
IMH2AT110
Rohm Semiconductor
IMH3AT110
Rohm Semiconductor
IMH4AT110
Rohm Semiconductor
IMH20TR1G
ON Semiconductor
NSVIMD10AMT1G
ON Semiconductor
BCR183UE6327HTSA1
Infineon Technologies
XCKU5P-3FFVA676E
Xilinx Inc.
EP2C50U484C7N
Intel
EP3C55F484C8
Intel
5SGXMA4K1F35C1N
Intel
XC6VHX250T-1FF1154I
Xilinx Inc.
XC6VSX475T-2FFG1156E
Xilinx Inc.
A54SX32A-FBG329
Microsemi Corporation
LCMXO3LF-9400C-5BG256C
Lattice Semiconductor Corporation
EP2AGX260EF29I3N
Intel
EPF6016AFC100-2
Intel