Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN2511(TE85L,F)
Manufacturer Part Number | RN2511(TE85L,F) |
---|---|
Future Part Number | FT-RN2511(TE85L,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2511(TE85L,F) Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74A, SOT-753 |
Supplier Device Package | SMV |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2511(TE85L,F) Weight | Contact Us |
Replacement Part Number | RN2511(TE85L,F)-FT |
RN1970(TE85L,F)
Toshiba Semiconductor and Storage
RN1971TE85LF
Toshiba Semiconductor and Storage
RN1973(TE85L,F)
Toshiba Semiconductor and Storage
RN2967(TE85L,F)
Toshiba Semiconductor and Storage
RN2969(TE85L,F)
Toshiba Semiconductor and Storage
RN2971(TE85L,F)
Toshiba Semiconductor and Storage
RN1961(TE85L,F)
Toshiba Semiconductor and Storage
RN2961(TE85L,F)
Toshiba Semiconductor and Storage
RN2962(TE85L,F)
Toshiba Semiconductor and Storage
RN2963(TE85L,F)
Toshiba Semiconductor and Storage
XC7A35T-2FGG484C
Xilinx Inc.
LIF-MD6000-6KMG80I
Lattice Semiconductor Corporation
EP20K600EFC672-3
Intel
10M50DCF256I6G
Intel
5SGSMD4K2F40I2L
Intel
5SGXMA5N2F45I3N
Intel
XC2V8000-5FFG1152C
Xilinx Inc.
LFE2M50E-5F484C
Lattice Semiconductor Corporation
EPF10K100ARC240-1N
Intel
EP2OK60EQI208-2X
Intel